The polarization mechanism in CdTe Schottky detectors

Journal Article · Mon Mar 09 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3099051· OSTI ID:21176026

Cola, Adriano ^[1]; Farella, Isabella ^[1]

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1. Institute for Microelectronics and Microsystems-Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy)

Schottky CdTe nuclear detectors are affected by bias-induced polarization phenomena when operating at room temperature. A space charge buildup occurs at the blocking contact causing the degradation in detection performance. By means of Pockels effect, we study the electric field distribution inside the detector and its variation with time and temperature. The analysis of the space charge has allowed us to point out the role of the Schottky contact and of carrier detrapping from deep levels in the polarization mechanism. Moreover, measured current transients have been quantitatively accounted for by the increase in the electric field at the blocking junction.

• OSTI ID: 21176026
• Journal Information: Applied Physics Letters, Vol. 94, Issue 10; Other Information: DOI: 10.1063/1.3099051; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
ELECTRIC FIELDS
POLARIZATION
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
SPACE CHARGE
TEMPERATURE RANGE 0273-0400 K