Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the InAs−Ta junction depends largely on the interfacial transparency, exhibiting distinct zero-bias behavior. For a relatively resistive interface, a broad conductance peak is observed at zero bias. When a transparent InAs−Ta interface is achieved, a zero-bias conductance dip appears with two coherent-peak-like features forming at bias voltages corresponding to the superconducting gap of Ta. The conductance spectra of the transparent InAs−Ta junction at different gate voltages can be fit well using the standard Blonder-Tinkham-Klapwijk theory.
- OSTI ID:
- 22391952
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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