Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

Journal Article · Fri May 15 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915418· OSTI ID:22391737

Rai, Hari. M.; Late, Ravikiran ^[1]; Sagdeo, Pankaj R.; Kumar, Rajesh ^[1]

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1. Material Research Laboratory, Discipline of Physics, School of Basic Sciences, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India)

In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence.

• OSTI ID: 22391737
• Journal Information: AIP Conference Proceedings, Vol. 1661, Issue 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CONFINEMENT
ELECTRONIC STRUCTURE
ENERGY GAP
ETCHING
EV RANGE
NANOWIRES
PHOTOLUMINESCENCE
SILICON
SPECTRAL REFLECTANCE
SUBSTRATES