Pressure-dependent photoluminescence study of ZnO nanowires

Journal Article · Mon Sep 13 00:00:00 EDT 2004 · Applied Physics Letters

OSTI ID:840449

Shan, W ^[1]; Walukiewicz, W; Ager, III, J W; Yu, K M; Zhang, Y; Mao, S S; Kling, R

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1. LBNL Library

The pressure dependence of the photoluminescence (PL) transition associated with the fundamental band gap of ZnO nanowires has been studied at pressures up to 15 GPa. ZnO nanowires are found to have a higher structural phase transition pressure around 12 GPa as compared to 9.0 GPa for bulk ZnO. The pressure-induced energy shift of the near band-edge luminescence emission yields a linear pressure coefficient of 29.6 meV/GPa with a small sublinear term of -0.43 meV/GPa{sup 2}. An effective hydrostatic deformation potential -3.97 eV for the direct band gap of the ZnO nanowires is derived from the result.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic Energy Sciences. Materials Science and Engineering Division (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 840449
• Report Number(s): LBNL--56318
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 86
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEFORMATION
HYDROSTATICS
LUMINESCENCE
PHOTOLUMINESCENCE
PRESSURE COEFFICIENT
PRESSURE DEPENDENCE