Electron microscopy study of Ni induced crystallization in amorphous Si thin films
- Institute for Technical Physics and Matl. Sci., Research Centre for Natural Sciences, Hungarian Academy of Sciences, 1121 Budapest, Konkoly-Thege u. 29-33, Hungary and Doctoral School of Physics at Eötvös Loránd University, 1117 (Hungary)
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 (Germany)
The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi{sub 2} phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi{sub 2} grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni{sub 3}Si{sub 2}. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.
- OSTI ID:
- 22391023
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1646; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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