Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy

Journal Article · Mon Oct 06 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4897993· OSTI ID:22351122

Sergent, S. ^[1]; Kako, S. ^[2]; Bürger, M.; Schupp, T.; As, D. J. ^[3]; Arakawa, Y. ^[1]

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1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
2. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
3. Department Physik, Universität Paderborn, 33095 Paderborn (Germany)

We study by microphotoluminescence the optical properties of single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy. We show evidences of both excitonic and multiexcitonic recombinations in individual quantum dots with radiative lifetimes shorter than 287 ± 8 ps. Owing to large band offsets and a large exciton binding energy, the excitonic recombinations of single zinc-blende GaN/AlN quantum dots can be observed up to 300 K.

• OSTI ID: 22351122
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
BINDING ENERGY
CRYSTAL STRUCTURE
DROPLETS
EPITAXY
GALLIUM NITRIDES
LIFETIME
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS