Polarized Emission from Single GaN Quantum Dots Grown by Molecular Beam Epitaxy

Journal Article · Fri Dec 23 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666493· OSTI ID:21612414

Amloy, S ^[1]; Yu, K H; Karlsson, K F; Holtz, P O ^[1]; Farivar, R; Andersson, T G ^[2]

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1. Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-58183 Linkoeping (Sweden)
2. Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Goeteborg (Sweden)

Polarization resolved microphotoluminescence measurements of single MBE-grown GaN/Al(Ga)N quantum dots (QDs) have been performed. The exciton and biexciton peaks with full width at half maximum as narrow as <500 {mu}eV were observed. Interestingly, there exist both positive and negative binding energies of the biexciton, explained in term of different sizes of the measured dots, resulting in different built-in electric field. Moreover, a strongly linearly polarized emission is observed for the investigated dots with a degree of linear polarization of about 0.9, interpreted as the valence-band mixing induced by in-plane anisotropy due to strain and/or QD shape.

• OSTI ID: 21612414
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
ANISOTROPY
BINDING ENERGY
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
ELECTRIC FIELDS
EMISSION
ENERGY
ENERGY RANGE
EPITAXY
EV RANGE
EXCITONS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INTERFACES
LUMINESCENCE
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
POLARIZATION
QUANTUM DOTS
QUASI PARTICLES
STRAINS
VALENCE