Systematic study of doping dependence on linear magnetoresistance in p-PbTe
- Instituto de Física, Universidade de São Paulo, São Paulo, PB 66318, São Paulo CEP 05315-970 (Brazil)
- Departamento de Física e Química, Universidade Federal de Itajubá, Itajubá, PB 50, Minas Gerais CEP 37500-903 (Brazil)
- Radboud University Nijmegen, Institute for Molecules and Materials, High Field Magnet Laboratory, Toernooiveld 7, 6525 ED Nijmegen (Netherlands)
- Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, São José dos Campos, PB 515, São Paulo CEP 12201-970 (Brazil)
We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.
- OSTI ID:
- 22350956
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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