Effect of Ag doping and annealing on thermoelectric properties of PbTe

Journal Article · Wed Jun 24 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4918103· OSTI ID:22490522

Bala, Manju; Tripathi, T. S.; Avasthi, D. K.; Asokan, K. ^[1]; Gupta, Srashti ^[2]

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1. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067 (India)
2. Institute of Physics, University Gottingen (Germany)

The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.

• OSTI ID: 22490522
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1665; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COMPARATIVE EVALUATIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
LEAD TELLURIDES
PROBES
SILVER
THERMOELECTRIC PROPERTIES
THIN FILMS
X-RAY DIFFRACTION