Quantum Hall effect in HgTe quantum wells at nitrogen temperatures
- Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)
- Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg (Germany)
- LNCMI, UPR 3228, CNRS-INSA-UJF-UPS, BP166, F-38042 Grenoble cedex 9 (France)
We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6 nm HgTe quantum well at magnetic fields up to 34 T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors ν of 1 and 2. This indicates that the large values of the g-factor (about 30–40) remain unchanged at very strong magnetic fields.
- OSTI ID:
- 22350796
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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