Band alignment of ultra-thin hetero-structure ZnO/TiO{sub 2} junction
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)
Graphical abstract: - Highlights: • Band alignment at the ZnO/TiO{sub 2} hetero-structural interface with different ZnO coating thickness was studied. • The valence band offset was decreased with increased ZnO coating layer thickness. • The interface dipole was responsible for the decreased band offset. - Abstract: The band alignment at the ZnO/TiO{sub 2} hetero-structure interface was measured by high resolution X-ray photoelectron spectroscopy. The valence band offset (E{sub ZnO}−E{sub TiO{sub 2}}){sub Valence} was linearly changed from 0.27 to 0.01 eV at the interface with increased ZnO coating thickness from 0.7 to 7 nm. The interface dipole presented at the ZnO/TiO{sub 2} interface was responsible for the decreased band offset. The band alignment of the ZnO/TiO{sub 2} heterojunction is a type II alignment.
- OSTI ID:
- 22348592
- Journal Information:
- Materials Research Bulletin, Vol. 51; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
Theoretical prediction of the band offsets at the ZnO/anatase TiO{sub 2} and GaN/ZnO heterojunctions using the self-consistent ab initio DFT/GGA-1/2 method
Enhanced photoelectrochemical activity of vertically aligned ZnO-coated TiO{sub 2} nanotubes