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Title: Growth and self-assembly of BaTiO{sub 3} nanocubes for resistive switching memory cells

Abstract

In this work, the self-assembled BaTiO{sub 3} nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 58–70, better reliability and stability over various polycrystalline BaTiO{sub 3} nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details. - Graphical abstract: This work describes a novel resistive switching memory cell based on self-assembled BaTiO{sub 3} nanocubes. - Highlights: • BaTiO{sub 3} nanocubes were prepared by one step facile hydrothermal method. • Self-assembled BaTiO{sub 3} nanocubes thin films were obtained by drop-coating approach. • The BaTiO{sub 3} nanocubes show excellent resistive switching properties for memory applications.

Authors:
 [1]; ;  [1];  [2];  [3];  [1]
  1. School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)
  2. Chongqing Key Lab for Advanced Materials and Clean Energies of Techonologies Dean, Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing (China)
  3. Research Center for Materials Back Casting Technology (MBT Center), Nagoya University, Nagoya 464-8603 (Japan)
Publication Date:
OSTI Identifier:
22334241
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Solid State Chemistry; Journal Volume: 214; Conference: 7. international conference on materials for advanced technologies, Singapore (Singapore), 30 Jun - 5 Jul 2013; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY; HYDROTHERMAL SYNTHESIS; NANOSTRUCTURES; POLYCRYSTALS; THIN FILMS; TITANATES

Citation Formats

Chu, Dewei, E-mail: D.Chu@unsw.edu.au, Lin, Xi, Younis, Adnan, Li, Chang Ming, Dang, Feng, and Li, Sean. Growth and self-assembly of BaTiO{sub 3} nanocubes for resistive switching memory cells. United States: N. p., 2014. Web. doi:10.1016/J.JSSC.2013.10.049.
Chu, Dewei, E-mail: D.Chu@unsw.edu.au, Lin, Xi, Younis, Adnan, Li, Chang Ming, Dang, Feng, & Li, Sean. Growth and self-assembly of BaTiO{sub 3} nanocubes for resistive switching memory cells. United States. doi:10.1016/J.JSSC.2013.10.049.
Chu, Dewei, E-mail: D.Chu@unsw.edu.au, Lin, Xi, Younis, Adnan, Li, Chang Ming, Dang, Feng, and Li, Sean. 2014. "Growth and self-assembly of BaTiO{sub 3} nanocubes for resistive switching memory cells". United States. doi:10.1016/J.JSSC.2013.10.049.
@article{osti_22334241,
title = {Growth and self-assembly of BaTiO{sub 3} nanocubes for resistive switching memory cells},
author = {Chu, Dewei, E-mail: D.Chu@unsw.edu.au and Lin, Xi and Younis, Adnan and Li, Chang Ming and Dang, Feng and Li, Sean},
abstractNote = {In this work, the self-assembled BaTiO{sub 3} nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 58–70, better reliability and stability over various polycrystalline BaTiO{sub 3} nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details. - Graphical abstract: This work describes a novel resistive switching memory cell based on self-assembled BaTiO{sub 3} nanocubes. - Highlights: • BaTiO{sub 3} nanocubes were prepared by one step facile hydrothermal method. • Self-assembled BaTiO{sub 3} nanocubes thin films were obtained by drop-coating approach. • The BaTiO{sub 3} nanocubes show excellent resistive switching properties for memory applications.},
doi = {10.1016/J.JSSC.2013.10.049},
journal = {Journal of Solid State Chemistry},
number = ,
volume = 214,
place = {United States},
year = 2014,
month = 6
}
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