Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes
- Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany)
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)
The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.
- OSTI ID:
- 22314473
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical properties of AlGaN quantum well structures
A hole accelerator for InGaN/GaN light-emitting diodes
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Conference
·
Sat Jul 01 00:00:00 EDT 2000
·
OSTI ID:20104606
A hole accelerator for InGaN/GaN light-emitting diodes
Journal Article
·
Mon Oct 13 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22350926
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Journal Article
·
Mon Apr 06 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22398850