Electron scattering mechanisms in Cu-Mn films for interconnect applications

Journal Article · Thu Aug 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4893718· OSTI ID:22314328

Misják, F.; Nagy, K. H.; Radnóczi, G. ^[1]; Lobotka, P. ^[2]

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1. Research Centre for Natural Sciences, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 49, Hungary, (Hungary)
2. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia)

Electrical properties and corresponding structural features of Cu-Mn alloy films with potential application as barrier and interconnect layers were studied. Cu-Mn films were deposited by DC magnetron sputtering at room temperature on SiO{sub 2} substrates. Electrical resistivity measurements were made as a function of film composition and temperature. The specific resistivity varies linearly with the Mn content showing a maximum of 205 μΩcm at 80 at. % Mn. The temperature coefficient of resistance (TCR) of all alloy films is low, showing non-metallic conductivity for most compositions. Also a minimum TCR has been observed in the 40–80 at. % Mn range which was attributed to a magnetic transformation around 200–300 K. Electrical resistivity measurements are correlated with the film structure revealed by transmission electron microscopy to clarify the phase regions throughout the composition range. In the 20–40 at. % and 70–80 at. % Mn ranges, two-phase structures were identified, where Cu- or Mn-rich solid solution grains were surrounded by a thin amorphous covering layer. Based on the revealed phase regions and morphologies electron scattering mechanisms in the system were evaluated by combining the Matthiessen's rule and the Mayadas-Schatzkes theory. Grain boundary reflectivity coefficients (r = 0.6–0.8) were calculated from fitting the model to the measurements. The proposed model indicates that, in a binary system, the special arrangement of the two phases results in new scattering mechanisms. The results are of value in optimizing the various parameters needed to produce a suitable barrier layer.

• OSTI ID: 22314328
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 8; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
DEPLETION LAYER
DEPOSITS
ELECTRIC CONDUCTIVITY
ELECTRONS
FILMS
GRAIN BOUNDARIES
MAGNETRONS
REFLECTIVITY
SCATTERING
SILICA
SILICON OXIDES
SOLID SOLUTIONS
SPUTTERING
SUBSTRATES
TEMPERATURE COEFFICIENT
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY