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Title: The microstructure and electrical transport properties of immiscible copper-niobium alloy thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2836970· OSTI ID:21064535
 [1]; ;  [2];  [3]
  1. Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203 (United States)
  2. Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai (India)
  3. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

Mutually immiscible in the solid state, copper and niobium exhibit a relatively strong clustering (phase separating) tendency in the liquid state and can therefore only be alloyed in a highly metastable form: for example, by vapor quenching. We have deposited metastable Cu-Nb alloy thin films with nominal compositions ranging from 5 to 90 at. % Nb by magnetron cosputtering. The microstructure of these films depends strongly on the composition and ranges from coarse-grained solid solutions for Cu-rich and Nb-rich compositions to phase-separated amorphous mixtures when the two elements are in comparable amounts. The crystalline Cu- or Nb-rich compositions exhibit positive temperature coefficients of resistivity (TCR) with the Cu-90 at. % Nb film exhibiting a superconducting transition with (T{sub C}){sub onset}{approx}4.5 K. The amorphous films show high room temperature resistivity, a negative TCR, and composition dependent superconducting transitions. We investigate the relation between the microstructure, phase stability, and the electrical transport properties.

OSTI ID:
21064535
Journal Information:
Journal of Applied Physics, Vol. 103, Issue 3; Other Information: DOI: 10.1063/1.2836970; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English