Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

Journal Article · Mon Jul 28 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891541· OSTI ID:22311225

Jo, Jeong-Wan; Kim, Yong-Hoon ^[1]

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1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

• OSTI ID: 22311225
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COMPARATIVE EVALUATIONS
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRON CAPTURE
GALLIUM OXIDES
ILLUMINANCE
INDIUM OXIDES
INTERFACES
MOS TRANSISTORS
PHOTOCHEMISTRY
SEMICONDUCTOR MATERIALS
THIN FILMS
VISIBLE RADIATION
ZINC OXIDES