Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

Journal Article · Wed Oct 15 04:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4899189· OSTI ID:22299628

Ha, Tae-Jun ^[1]

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1. Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of)

We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

• OSTI ID: 22299628
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 10 Vol. 4; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
DIELECTRIC MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
GALLIUM
HYSTERESIS
INDIUM
INSTABILITY
IRRADIATION
SEMICONDUCTOR MATERIALS
STRESSES
THIN FILMS
ZINC OXIDES