Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO{sub 2} films

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891855· OSTI ID:22311200

Lang, Wen-Jing; Li, Zhi-Qing ^[1]

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1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin 300072 (China)

Both the semi-classical and quantum transport properties of F-doped SnO{sub 2} thick films (∼1 μm) were investigated experimentally. We found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ∼90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed. The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the fact that the carrier concentration has negligible temperature dependence, indicate that the conduction electrons in F-doped SnO{sub 2} films possess free-electron-like characteristics. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predications of scattering rates of large- and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor.

• OSTI ID: 22311200
• Journal Information: Applied Physics Letters, Vol. 105, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRON-ELECTRON INTERACTIONS
ENERGY TRANSFER
FILMS
FLUORINE ADDITIONS
INELASTIC SCATTERING
RELAXATION TIME
SEMICONDUCTOR MATERIALS
STRONG INTERACTIONS
TEMPERATURE DEPENDENCE
THREE-DIMENSIONAL CALCULATIONS
TIN OXIDES