Optimal carrier concentration for FeSb2 colossal thermopower

Du, Qianheng; Petrovic, Cedomir

doi:10.1063/5.0048165

Optimal carrier concentration for FeSb₂ colossal thermopower

Journal Article · Mon Jun 07 00:00:00 EDT 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0048165· OSTI ID:1805264

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Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)

Crystals of FeSb₂ correlated narrow-gap semiconductor host colossal thermopower values. By tuning the impurity level here, we demonstrate that electron-phonon scattering that transfers phonon momentum to electrons is efficient only for certain optimal carrier concentration in the low-mobility band. Phonon drag acting on such states in crystals with high phonon mean free path enhances thermopower to colossal values, whereas for different carrier concentration, dominant thermal transport mechanism is electronic diffusion. This highlights the dual nature of correlated in-gap states that take part in the phonon drag but also reduce phonon mean free path.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1805264

Alternate ID(s):: OSTI ID: 1786855

Report Number(s):: BNL--221725-2021-JAAM

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 118; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Optimal carrier concentration for FeSb2 colossal thermopower

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Optimal carrier concentration for FeSb₂ colossal thermopower