High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

doi:https://doi.org/10.1063/1.4895388

Title: High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

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Abstract

We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

Authors:

Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. ^[1]; Zheng, N.; Ahrenkiel, P. ^[2]; Martinez, J. ^[3]

Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States)
Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States)
Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

Publication Date:: 2014-09-01

OSTI Identifier:: 22311018

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPED MATERIALS; ELECTRON MOBILITY; EPITAXY; FOILS; GALLIUM ARSENIDES; GRAIN ORIENTATION; METALS; MONOCRYSTALS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECT; SOLAR CELLS; SUBSTRATES; TEXTURE; THIN FILMS

Citation Formats


                    Dutta, P., E-mail: pdutta2@central.uh.edu, Rathi, M., Gao, Y., Yao, Y., Selvamanickam, V., Zheng, N., Ahrenkiel, P., and Martinez, J. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4895388.

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                    Dutta, P., E-mail: pdutta2@central.uh.edu, Rathi, M., Gao, Y., Yao, Y., Selvamanickam, V., Zheng, N., Ahrenkiel, P., & Martinez, J. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition.  United States.  https://doi.org/10.1063/1.4895388

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                    Dutta, P., E-mail: pdutta2@central.uh.edu, Rathi, M., Gao, Y., Yao, Y., Selvamanickam, V., Zheng, N., Ahrenkiel, P., and Martinez, J. Mon .  
        "High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition".  United States.  https://doi.org/10.1063/1.4895388.

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@article{osti_22311018,

  title        = {High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition},

  author       = {Dutta, P., E-mail: pdutta2@central.uh.edu and Rathi, M. and Gao, Y. and Yao, Y. and Selvamanickam, V. and Zheng, N. and Ahrenkiel, P. and Martinez, J.},

  abstractNote = {We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.},

  doi          = {10.1063/1.4895388},

  url          = {https://www.osti.gov/biblio/22311018},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 9,

  volume       = 105,

  place        = {United States},

  year         = {2014},

  month        = {9}

}

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