Controlling quantum dot energies using submonolayer bandstructure engineering

Journal Article · Mon Aug 25 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893983· OSTI ID:22310931

Yu, L.; Law, S.; Wasserman, D. ^[1]; Jung, D.; Lee, M. L. ^[2]; Shen, J.; Cha, J. J. ^[3]

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1. Department of Electrical and Computer Engineering, University of Illinois Urbana Champaign, Urbana, Illinois 61801 (United States)
2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
3. Department of Mechanical Engineering and Materials Science and Energy Science Institute, Yale University, New Haven, Connecticut 06520 (United States)

We demonstrate control of energy states in epitaxially-grown quantum dot structures formed by stacked submonolayer InAs depositions via engineering of the internal bandstructure of the dots. Transmission electron microscopy of the stacked sub-monolayer regions shows compositional inhomogeneity, indicative of the presence of quantum dots. The quantum dot ground state is manipulated not only by the number of deposited InAs layers, but also by control of the thickness and material composition of the spacing layers between submonolayer InAs depositions. In this manner, we demonstrate the ability to shift the quantum dot ground state energy at 77 K from 1.38 eV to 1.88 eV. The results presented offer a potential avenue towards enhanced control of dot energies for a variety of optoelectronic applications.

• OSTI ID: 22310931
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
EPITAXY
EV RANGE
GROUND STATES
INDIUM ARSENIDES
LAYERS
QUANTUM DOTS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY