Formation of columnar (In,Ga)As quantum dots on GaAs(100)

Journal Article · Mon Oct 04 04:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1801172· OSTI ID:20634312

He, J; Noetzel, R; Offermans, P; Koenraad, P M; Gong, Q; Hamhuis, G J; Eijkemans, T J; Wolter, J H ^[1]

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1. eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced.

• OSTI ID: 20634312
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASPECT RATIO
ATOMIC FORCE MICROSCOPY
DEPOSITION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
SPECTROSCOPY
SUBSTRATES
WAVELENGTHS