The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films
- Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696-7907 (United States)
Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.
- OSTI ID:
- 22310900
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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