Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
- Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom)
- Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom)
Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2–10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30–40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (∼100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN.
- OSTI ID:
- 22308699
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 3; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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