Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors
Abstract
The theoretical model of the polarization Coulomb field scattering (PCF) caused by the polarization charge density variation at the AlGaN/AlN interface in strained AlGaN/AlN/GaN heterostructure field-effect transistors has been developed. And the theoretical values for the electron drift mobility, which were calculated using the Matthiessen's rule that includes PCF, piezoelectric scattering, polar optical-phonon scattering, and interface roughness scattering, are in good agreement with our experimental values. Therefore, the theoretical model for PCF has been confirmed.
- Authors:
-
- School of Physics, Shandong University, Jinan 250100 (China)
- National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
- Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
- Publication Date:
- OSTI Identifier:
- 22308564
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; CARRIER MOBILITY; CHARGE DENSITY; COULOMB FIELD; ELECTRON DRIFT; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INTERFACES; MATTHIESSEN RULE; NITROGEN COMPOUNDS; PHONONS; PIEZOELECTRICITY; POLARIZATION; ROUGHNESS; SCATTERING; SIMULATION; STRAINS
Citation Formats
Luan, Chongbiao, Lin, Zhaojun, Zhao, Jingtao, Wang, Yutang, Lv, Yuanjie, Chen, Hong, and Wang, Zhanguo. Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors. United States: N. p., 2014.
Web. doi:10.1063/1.4891258.
Luan, Chongbiao, Lin, Zhaojun, Zhao, Jingtao, Wang, Yutang, Lv, Yuanjie, Chen, Hong, & Wang, Zhanguo. Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors. United States. https://doi.org/10.1063/1.4891258
Luan, Chongbiao, Lin, Zhaojun, Zhao, Jingtao, Wang, Yutang, Lv, Yuanjie, Chen, Hong, and Wang, Zhanguo. 2014.
"Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors". United States. https://doi.org/10.1063/1.4891258.
@article{osti_22308564,
title = {Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors},
author = {Luan, Chongbiao and Lin, Zhaojun and Zhao, Jingtao and Wang, Yutang and Lv, Yuanjie and Chen, Hong and Wang, Zhanguo},
abstractNote = {The theoretical model of the polarization Coulomb field scattering (PCF) caused by the polarization charge density variation at the AlGaN/AlN interface in strained AlGaN/AlN/GaN heterostructure field-effect transistors has been developed. And the theoretical values for the electron drift mobility, which were calculated using the Matthiessen's rule that includes PCF, piezoelectric scattering, polar optical-phonon scattering, and interface roughness scattering, are in good agreement with our experimental values. Therefore, the theoretical model for PCF has been confirmed.},
doi = {10.1063/1.4891258},
url = {https://www.osti.gov/biblio/22308564},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 116,
place = {United States},
year = {Mon Jul 28 00:00:00 EDT 2014},
month = {Mon Jul 28 00:00:00 EDT 2014}
}
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