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Title: Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Abstract

The theoretical model of the polarization Coulomb field scattering (PCF) caused by the polarization charge density variation at the AlGaN/AlN interface in strained AlGaN/AlN/GaN heterostructure field-effect transistors has been developed. And the theoretical values for the electron drift mobility, which were calculated using the Matthiessen's rule that includes PCF, piezoelectric scattering, polar optical-phonon scattering, and interface roughness scattering, are in good agreement with our experimental values. Therefore, the theoretical model for PCF has been confirmed.

Authors:
; ; ;  [1];  [2];  [3];  [4]
  1. School of Physics, Shandong University, Jinan 250100 (China)
  2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
  3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
  4. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22308564
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; CARRIER MOBILITY; CHARGE DENSITY; COULOMB FIELD; ELECTRON DRIFT; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INTERFACES; MATTHIESSEN RULE; NITROGEN COMPOUNDS; PHONONS; PIEZOELECTRICITY; POLARIZATION; ROUGHNESS; SCATTERING; SIMULATION; STRAINS

Citation Formats

Luan, Chongbiao, Lin, Zhaojun, Zhao, Jingtao, Wang, Yutang, Lv, Yuanjie, Chen, Hong, and Wang, Zhanguo. Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors. United States: N. p., 2014. Web. doi:10.1063/1.4891258.
Luan, Chongbiao, Lin, Zhaojun, Zhao, Jingtao, Wang, Yutang, Lv, Yuanjie, Chen, Hong, & Wang, Zhanguo. Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors. United States. https://doi.org/10.1063/1.4891258
Luan, Chongbiao, Lin, Zhaojun, Zhao, Jingtao, Wang, Yutang, Lv, Yuanjie, Chen, Hong, and Wang, Zhanguo. 2014. "Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors". United States. https://doi.org/10.1063/1.4891258.
@article{osti_22308564,
title = {Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors},
author = {Luan, Chongbiao and Lin, Zhaojun and Zhao, Jingtao and Wang, Yutang and Lv, Yuanjie and Chen, Hong and Wang, Zhanguo},
abstractNote = {The theoretical model of the polarization Coulomb field scattering (PCF) caused by the polarization charge density variation at the AlGaN/AlN interface in strained AlGaN/AlN/GaN heterostructure field-effect transistors has been developed. And the theoretical values for the electron drift mobility, which were calculated using the Matthiessen's rule that includes PCF, piezoelectric scattering, polar optical-phonon scattering, and interface roughness scattering, are in good agreement with our experimental values. Therefore, the theoretical model for PCF has been confirmed.},
doi = {10.1063/1.4891258},
url = {https://www.osti.gov/biblio/22308564}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 116,
place = {United States},
year = {Mon Jul 28 00:00:00 EDT 2014},
month = {Mon Jul 28 00:00:00 EDT 2014}
}