Depth profile reconstructions of electronic transport properties in H{sup +} MeV-energy ion-implanted n-Si wafers using photocarrier radiometry

Journal Article · Mon Jul 21 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4887117· OSTI ID:22308474

Tai, Rui; Wang, Chinhua; Hu, Jingpei ^[1]; Mandelis, Andreas ^[2]

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1. Institute of Modern Optical Technologies and Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Lab of Advanced Optical Manufacturing Technologies and MOE Key Lab of Modern Optical Technologies, Soochow University, Suzhou 215006 (China)
2. Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Ontario M5S 3G8 (Canada)

A depth profiling technique using photocarrier radiometry (PCR) is demonstrated and used for the reconstruction of continuously varying electronic transport properties (carrier lifetime and electronic diffusivity) in the interim region between the ion residence layer and the bulk crystalline layer in H{sup +} implanted semiconductor wafers with high implantation energies (∼MeV). This defect-rich region, which is normally assumed to be part of the homogeneous “substrate” in all existing two- and three-layer models, was sliced into many virtual thin layers along the depth direction so that the continuously and monotonically variable electronic properties across its thickness can be considered uniform within each virtual layer. The depth profile reconstruction of both carrier life time and diffusivity in H{sup +} implanted wafers with several implantation doses (3 × 10{sup 14}, 3 × 10{sup 15}, and 3 × 10{sup 16} cm{sup −2}) and different implantation energies (from 0.75 to 2.0 MeV) is presented. This all-optical PCR method provides a fast non-destructive way of characterizing sub-surface process-induced electronic defect profiles in devices under fabrication at any intermediate stage before final metallization and possibly lead to process correction and optimization well before electrical testing and defect diagnosis becomes possible.

• OSTI ID: 22308474
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER LIFETIME
CARRIERS
CORRECTIONS
CRYSTAL DEFECTS
DEPTH
HYDROGEN IONS 1 PLUS
LAYERS
MEV RANGE
N-TYPE CONDUCTORS
OPTIMIZATION
PHYSICAL RADIATION EFFECTS
POLYMERASE CHAIN REACTION
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
THICKNESS
THIN FILMS