H{sup +} ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry

Journal Article · Fri Jun 15 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2748868· OSTI ID:20979436

Chinhua, Wang; Mandelis, Andreas; Tolev, Jordan; Burchard, Bernd; Meijer, Jan ^[1]

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1. Institute of Modern Optical Technologies, Suzhou University, Suzhou, Jiangsu 215006 (China)

Industrial n-type Si wafers (resistivity of 5-10 {omega} cm) were H{sup +} ion implanted with energies between 0.75 and 2.00 MeV, and the electronic transport properties of the implanted layer (recombination lifetime, carrier diffusion coefficient, and front-surface and implanted-interface recombination velocities s{sub 1} and s{sub 2}) were studied using photocarrier radiometry (PCR). A quantitative fitting procedure to the diffusing photoexcited free-carrier density wave was introduced using a relatively simple two-layer PCR model in lieu of the more realistic but substantially more complicated three-layer model. The experimental trends in the transport properties of H{sup +}-implanted Si layers extracted from the PCR amplitude and phase data as functions of implantation energy corroborate a physical model of the implanted layer in which (a) overlayer damage due to the light H{sup +} ions decreases with increased depth of implantation at higher energies (b) the implanted region damage close to the interface is largely decoupled from the overlayer crystallinity, and (c) the concentration of implanted H{sup +} ions decreases at higher implantation energies at the interface, thus decreasing the degree of implantation damage at the interface proper.

• OSTI ID: 20979436
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
CARRIER LIFETIME
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT
ENERGY DEPENDENCE
HYDROGEN IONS 1 PLUS
INTERFACES
ION BEAMS
ION IMPLANTATION
LAYERS
MEV RANGE 01-10
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON
SIMULATION
THIN FILMS