All optical method for investigation of spin and charge transport in semiconductors: Combination of spatially and time-resolved luminescence

Journal Article · Mon Jul 14 04:00:00 UTC 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4889799· OSTI ID:22308450

Cadiz, F.; Paget, D.; Grebenkov, D.; Korb, J. P.; Rowe, A. C. H. ^[1]; Barate, P.; Amand, T. ^[2]; Arscott, S.; Peytavit, E. ^[3]

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1. Physique de la matière condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau (France)
2. Université de Toulouse, INSA-CNRS-UPS, 31077 Toulouse Cedex (France)
3. Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), University of Lille, CNRS, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq (France)

A new approach is demonstrated for investigating charge and spin diffusion as well as surface and bulk recombination in unpassivated doped semiconductors. This approach consists in using two complementary, conceptually related, techniques, which are time-resolved photoluminescence (TRPL) and spatially resolved microluminescence (μPL) and is applied here to p{sup +} GaAs. Analysis of the sole TRPL signal is limited by the finite risetime. On the other hand, it is shown that joint TRPL and μPL can be used to determine the diffusion constant, the bulk recombination time, and the spin relaxation time. As an illustration, the temperature variation of these quantities is investigated for p{sup +} GaAs.

• OSTI ID: 22308450
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE TRANSPORT
DIFFUSION
DOPED MATERIALS
GALLIUM ARSENIDES
P-TYPE CONDUCTORS
PHOSPHORUS IONS
PHOTOLUMINESCENCE
RECOMBINATION
RELAXATION TIME
SEMICONDUCTOR MATERIALS
SPIN
TIME RESOLUTION