Terahertz photon-electron pump effect and Fano-like resonance in the two-level InAs quantum dot
- Department of Physics, Center for Theoretical Physics, Capital Normal University, Beijing 100048 (China)
- Laboratory of Thin Film Materials, Beijing University of Technology, Beijing 100022 (China)
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China)
In this work, with the completely asymmetric terahertz (THz) irradiation, electron transport through a two-level InAs quantum dot is theoretically discussed. The Coulomb interaction in this system is compared with the energy difference between the two energy levels and is finite contrasted with the Microwave Field system. We investigate the average current trend with the change of Coulomb interaction and the THz irradiation strength. Our results reveal that there exists the photon-electron pump effect at the Coulomb interaction related energy level, and demonstrate Fano-like resonance in the low THz field strength due to the presence of the photon induced excited state resonance. We also find that the Fano-like resonance can be suppressed with increasing the temperature.
- OSTI ID:
- 22305943
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region
Terahertz radiation from InAs induced by carrier diffusion and drift