Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

Journal Article · Mon Apr 15 04:00:00 EDT 2013 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/J.JSSC.2013.02.006· OSTI ID:22304562

Sun, Yunfei ^[1]; Yang, Jinghai ^[2]; Yang, Lili; Cao, Jian ^[2]; Gao, Ming ^[1]; Zhang, Zhiqiang; Wang, Zhe ^[2]; Song, Hang ^[1]

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1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)
2. Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China)

ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

• OSTI ID: 22304562
• Journal Information: Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Vol. 200; ISSN 0022-4596; ISSN JSSCBI
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
ADSORPTION
CADMIUM SULFIDES
DEPOSITS
EFFICIENCY
ELECTRIC POTENTIAL
ELECTROLYTES
ELECTRON TRANSFER
ELECTRONS
PHOTOVOLTAIC EFFECT
QUANTUM DOTS
SCANNING ELECTRON MICROSCOPY
SOLAR CELLS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES
ZINC SULFIDES