Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1−x}N Schottky barrier solar cells

Journal Article · Wed May 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4878158· OSTI ID:22304418

Arefinia, Zahra ^[1]; Asgari, Asghar ^[1]

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1. Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of)

Based on the ability of In{sub x}Ga{sub 1−x}N materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type In{sub x}Ga{sub 1−x}N with low indium contents and interfacing with graphene film (G/In{sub x}Ga{sub 1−x}N), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-In{sub x}Ga{sub 1−x}N showed relatively smaller short-circuits current (∼7 mA/cm{sup 2}) and significantly higher open-circuit voltage (∼4 V) and efficiency (∼30%). The thickness, doping concentration, and indium contents of p-In{sub x}Ga{sub 1−x}N and graphene work function were found to substantially affect the performance of G/p-In{sub x}Ga{sub 1−x}N.

• OSTI ID: 22304418
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
CURRENTS
EFFICIENCY
ELECTRIC POTENTIAL
ELECTRICAL FAULTS
FILMS
GALLIUM COMPOUNDS
GRAPHENE
INDIUM COMPOUNDS
NITROGEN COMPOUNDS
OPACITY
OPTIMIZATION
RECOMBINATION
SCHOTTKY BARRIER SOLAR CELLS
SILICON
SIMULATION
SPECTRA
THICKNESS
WORK FUNCTIONS