Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1–x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells

Xu, Xiaojie; Bullock, James; Schelhas, Laura T.; Stutz, Elias Z.; Fonseca, Jose J.; Hettick, Mark; Pool, Vanessa L.; Tai, Kong Fai; Toney, Michael F.; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W.

doi:10.1021/acs.nanolett.5b05124

Title: Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)_x:(ZnS)_1–x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells

Journal Article · Mon Feb 08 00:00:00 EST 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.5b05124· OSTI ID:1579819

Xu, Xiaojie ^[1]; Bullock, James ^[2]; Schelhas, Laura T. ^[3]; Stutz, Elias Z. ^[4]; Fonseca, Jose J. ^[2]; Hettick, Mark ^[5]; Pool, Vanessa L. ^[3]; Tai, Kong Fai ^[6]; Toney, Michael F. ^[3]; Fang, Xiaosheng ^[7]; Javey, Ali ^[5]; Wong, Lydia Helena ^[6]; Ager, Joel W. ^[5]

Fudan Univ., Shanghai (China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Swiss Federal Institute of Technology (EPFL), Lausanne (Switzerland); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Nanyang Technological Univ. (Singapore)
Fudan Univ., Shanghai (China)

P-type transparent conducting films of nanocrystalline (CuS)_x:(ZnS)_1–x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm^-1, which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)_x:(ZnS)_1–x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV).

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Research Organization:: Stanford Univ., CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: EE0004946; AC02-05CH11231; SC0004993; AC02-76SF00515

OSTI ID:: 1579819

Alternate ID(s):: OSTI ID: 1530231

Journal Information:: Nano Letters, Vol. 16, Issue 3; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 79 works

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Title: Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1–x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells

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