Ferroelectric switching in epitaxial GeTe films

Journal Article · Sun Jun 01 00:00:00 EDT 2014 · APL Materials

DOI:https://doi.org/10.1063/1.4881735· OSTI ID:22304199

Fons, P.; Tominaga, J. ^[1]; Kim, D. J.; Giussani, A.; Calarco, R. ^[2]

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1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 Japan (Japan)
2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

• OSTI ID: 22304199
• Journal Information: APL Materials, Vol. 2, Issue 6; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPUTERIZED SIMULATION
DENSITY FUNCTIONAL METHOD
EPITAXY
FERROELECTRIC MATERIALS
GERMANIUM TELLURIDES
MICROSCOPY
POLARIZATION
SUBSTRATES
THIN FILMS