Growth of InGaAs/GaAsP multiple quantum well solar cells on mis-orientated GaAs substrates
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904 (Japan)
- Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)
The effects of growth temperature on the properties of InGaAs/GaAsP multiple quantum well (MQW) solar cells on various mis-orientated GaAs substrates were studied using metalorganic vapor phase epitaxy. Thickness modulation effect caused by mismatch strain of InGaAs/GaAsP could be suppressed by low growth temperature. Consequently, abrupt MQWs with strong light absorption could be deposited on mis-oriented substrates. However, degradation in crystal quality and impurity incorporation are the main drawbacks with low temperature growth because they tend to strongly degraded carrier transport and collection efficiency. MQW solar cells grown at optimized temperature showed the better conversion efficiency. The further investigation should focus on improvement of crystal quality and background impurities.
- OSTI ID:
- 22303979
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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