C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation
- Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)
- Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)
By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-H surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.
- OSTI ID:
- 22303964
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
BORON ADDITIONS
BREAKDOWN
CURRENT DENSITY
CURRENTS
DIAMONDS
DOPED MATERIALS
ELECTRIC POTENTIAL
GALLIUM NITRIDES
METALS
MOSFET
OXIDIZERS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SURFACES
TEMPERATURE RANGE 0400-1000 K
WATER