Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in. beta. -SiC thin films

Journal Article · Mon Aug 15 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341731· OSTI ID:6948821

Palmour, J W; Kong, H S; Davis, R F

Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on ..beta..-SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (Al) p-type ..beta..-SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type ..beta..-SiC(111) thin films grown on the Si(0001) face of a 6H ..cap alpha..-SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperature up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion-mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.

• Research Organization: Department of Materials Science and Engineering, Box 7907, North Carolina State University, Raleigh, North Carolina 27695-7907
• OSTI ID: 6948821
• Journal Information: J. Appl. Phys.; (United States), Vol. 64:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
MOSFET
FABRICATION
PERFORMANCE
SILICON CARBIDES
ELECTRICAL PROPERTIES
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
HIGH TEMPERATURE
SILICON
THIN FILMS
VERY HIGH TEMPERATURE
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
DATA
DEPOSITION
ELEMENTS
FIELD EFFECT TRANSISTORS
FILMS
INFORMATION
MOS TRANSISTORS
NUMERICAL DATA
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360603 - Materials- Properties