Gain dynamics of quantum dot devices for dual-state operation

Journal Article · Mon Jun 30 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4885383· OSTI ID:22303883

Herzog, B.; Kolarczik, M.; Owschimikow, N.; Woggon, U. ^[1]; Schmeckebier, H.; Arsenijević, D.; Bimberg, D. ^[2]; Mikhelashvili, V.; Eisenstein, G. ^[3]

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1. Institut für Optik und Atomare Physik, Technische Universität Berlin, Berlin (Germany)
2. Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany)
3. Technion Institute of Technology, Faculty of Electrical Engineering, Haifa (Israel)

Ground state gain dynamics of In(Ga)As-quantum dot excited state lasers are investigated via single-color ultrafast pump-probe spectroscopy below and above lasing threshold. Two-color pump-probe experiments are used to localize lasing and non-lasing quantum dots within the inhomogeneously broadened ground state. Single-color results yield similar gain recovery rates of the ground state for lasing and non-lasing quantum dots decreasing from 6 ps to 2 ps with increasing injection current. We find that ground state gain dynamics are influenced solely by the injection current and unaffected by laser operation of the excited state. This independence is promising for dual-state operation schemes in quantum dot based optoelectronic devices.

• OSTI ID: 22303883
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COLOR
CURRENTS
EXCITED STATES
GAIN
GALLIUM ADDITIONS
GROUND STATES
INDIUM ARSENIDES
INJECTION
LASERS
PUMPING
QUANTUM DOTS
SPECTROSCOPY