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Title: Testing epitaxial Co{sub 1.5}Fe{sub 1.5}Ge(001) electrodes in MgO-based magnetic tunnel junctions

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4885354· OSTI ID:22303861
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  1. Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre lès Nancy (France)
  2. Synchrotron SOLEIL-CNRS, L'Orme des Merisiers, Saint-Aubin BP48, 91192 Gif-sur-Yvette (France)
  3. Institut d'Electronique Fondamentale, CNRS, UMR 8622, 91405 Orsay (France)
  4. Department of Physics and Astronomy/Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487 (United States)
  5. San Jose Research Center, HGST, a Western Digital company, San Jose, California 95135 (United States)

The ability of the full Heusler alloy Co{sub 1.5}Fe{sub 1.5}Ge(001) (CFG) to be a Half-Metallic Magnetic (HMM) material is investigated. Epitaxial CFG(001) layers were grown by molecular beam epitaxy. The results obtained using electron diffraction, X-ray diffraction, and X-ray magnetic circular dichroism are consistent with the full Heusler structure. The pseudo-gap in the minority spin density of state typical in HMM is examined using spin-resolved photoemission. Interestingly, the spin polarization found to be negative at E{sub F} in equimolar CoFe(001) is observed to shift to positive values when inserting Ge in CoFe. However, no pseudo-gap is found at the Fermi level, even if moderate magnetization and low Gilbert damping are observed as expected in HMM materials. Magneto-transport properties in MgO-based magnetic tunnel junctions using CFG electrodes are investigated via spin and symmetry resolved photoemission.

OSTI ID:
22303861
Journal Information:
Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English