Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals
- Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy)
The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.
- OSTI ID:
- 22303854
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors
High-Temperature Annealing of CdZnTe Detectors
Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity
Journal Article
·
Wed Feb 11 00:00:00 EST 2015
· Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
·
OSTI ID:22303854
+7 more
High-Temperature Annealing of CdZnTe Detectors
Journal Article
·
Fri Nov 10 00:00:00 EST 2017
· IEEE Transactions on Nuclear Science
·
OSTI ID:22303854
+5 more
Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity
Journal Article
·
Tue Jul 17 00:00:00 EDT 2018
· IEEE Transactions on Nuclear Science
·
OSTI ID:22303854
+4 more