High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Journal Article · Mon Jun 23 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4884947· OSTI ID:22303835

Hoang, A. M.; Chen, G.; Chevallier, R.; Haddadi, A.

Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6 μm. At 77 K, the photodiode exhibited a peak responsivity of 4.8 A/W, corresponding to a quantum efficiency of 46% at −300 mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7 A/cm{sup 2}, it provided a specific detectivity of 1.4 × 10{sup 10} Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.

• OSTI ID: 22303835
• Journal Information: Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY COMPOUNDS
CURRENT DENSITY
DETECTION
ELECTRIC POTENTIAL
EQUIPMENT
GALLIUM ANTIMONIDES
ILLUMINANCE
INDIUM ARSENIDES
INFRARED RADIATION
PHOTODETECTORS
PHOTODIODES
QUANTUM EFFICIENCY
SUBSTRATES
SUPERLATTICES
TEMPERATURE RANGE 0013-0065 K
WAVELENGTHS