Sodium diffusion in 4H-SiC

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · APL Materials

DOI:https://doi.org/10.1063/1.4895040· OSTI ID:22303573

Hallén, A. ^[1]

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1. Integrated Devices and Circuits, KTH Royal Institute of Technology, Electrum 229, SE-164 40 Kista (Sweden)

Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 °C in p-type 4H-SiC. On the other hand for sodium atoms trapped at suitable sites the mobility is limited up to 1800 °C. Trap limited diffusion kinetics is suggested and an effective diffusivity has been extracted with an activation energy of 4 eV for sodium diffusion in p-type 4H-SiC.

• OSTI ID: 22303573
• Journal Information: APL Materials, Vol. 2, Issue 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
DIFFUSION
HEAT TREATMENTS
MASS SPECTROSCOPY
MOBILITY
SILICON CARBIDES
SODIUM