Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots

Journal Article · Sun Dec 15 00:00:00 EST 2013 · Semiconductors

DOI:https://doi.org/10.1134/S106378261312021X· OSTI ID:22300424

Gorshkov, A. P.; Zdoroveishchev, A. V.; Vikhrova, O. V.; Zvonkov, B. N. ^[1]

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1. Lobachevskii Nizhni Novgorod State University (Russian Federation)

The effect of the incorporation of an InGaAs quantum well into structures with InAs/GaAs quantum dots grown by gas-phase epitaxy on their optoelectronic properties is analyzed in the mode with increased growth-interruption time. It is established that the quantum-dot energy spectrum is weakly sensitive to variations in the thickness and composition of the double InGaAs/GaAs coating layer. The deposition of a quantum well onto a layer of quantum dots decreases the emission-barrier effective height in them. The conditions under which the quantum well can be used for protecting the quantum-dot active layer against penetration by defects generated during structure-surface anodic oxidation are determined.

• OSTI ID: 22300424
• Journal Information: Semiconductors, Vol. 47, Issue 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
DEFECTS
DEPOSITION
ENERGY SPECTRA
EPITAXY
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
OXIDATION
QUANTUM DOTS
QUANTUM WELLS
THICKNESS