skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Optical and electrical properties study of sol-gel derived Cu{sub 2}ZnSnS{sub 4} thin films for solar cells

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4895520· OSTI ID:22300247
; ;  [1]
  1. National Laboratory of Solid State Microstructures, Photovoltaic Engineering Center, Nanjing University, Nanjing 210093 (China)

The fabrication of environmental-friendly Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with pure kesterite phase is always a challenge to researchers in the field of solar cells. We introduce a simple non-vacuum sol-gel method to fabricate kesterite CZTS films. Ethylenediamine is used as the chelating agent and stabilizer and plays an important role in preparing stable precursor. X-ray diffraction, Raman and scanning electron microscopy studies suggest that the microstructure and optical properties of CZTS films depend strongly on annealing temperatures. The temperature dependence of conductivity of 500 °C annealed CZTS film shows that the Mott law dominates in the low temperature region and thermionic emission is predominant at high temperatures.

OSTI ID:
22300247
Journal Information:
AIP Advances, Vol. 4, Issue 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English