Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

Journal Article · Mon May 19 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4879283· OSTI ID:22300221

Starschich, S.; Griesche, D.; Schneller, T.; Böttger, U. ^[1]; Waser, R. ^[1]

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1. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstraße 24, D-52074 Aachen (Germany)

Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm{sup 2}. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO{sub 2}.

• OSTI ID: 22300221
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
DEPOSITION
DOPED MATERIALS
ELECTRODES
FERROELECTRIC MATERIALS
FILMS
HAFNIUM OXIDES
LAYERS
ORTHORHOMBIC LATTICES
PIEZOELECTRICITY
PLATINUM
POLARIZATION
SOLUTIONS
THICKNESS
YTTRIUM ADDITIONS