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Title: Epitaxial stabilization of ultra thin films of electron doped manganites

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4879456· OSTI ID:22300198
; ; ; ; ;  [1]; ;  [2]; ;  [3]
  1. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
  2. Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)
  3. Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

OSTI ID:
22300198
Journal Information:
Applied Physics Letters, Vol. 104, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English