Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells
- Department of Physics, University of North Texas, Denton, Texas 76203 (United States)
- CICECO, University of Aveiro, 3810-193 Aveiro (Portugal)
- SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)
The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.
- OSTI ID:
- 22299893
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface
Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes
Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
Journal Article
·
Tue Apr 21 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22402859
Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes
Journal Article
·
Mon Jul 07 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22306156
Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
Journal Article
·
Thu Feb 27 23:00:00 EST 2014
· Journal of Applied Physics
·
OSTI ID:22277979