Hydrogen-doping stabilized metallic VO{sub 2} (R) thin films and their application to suppress Fabry-Perot resonances in the terahertz regime
- Department of Electrical and Computer Engineering and Nano Tech Center, Lubbock, Texas 79409 (United States)
- Department of Physics and Nano Tech Center, Lubbock, Texas 79409 (United States)
- Department of Physics and MSEC, Texas State University, San Marcos, Texas 78666 (United States)
We demonstrate that catalyst-assisted hydrogen spillover doping of VO{sub 2} thin films significantly alters the metal-insulator transition characteristics and stabilizes the metallic rutile phase at room temperature. With hydrogen inserted into the VO{sub 2} lattice, high resolution X-ray diffraction reveals expansion of the V-V chain separation when compared to the VO{sub 2}(R) phase. The donated free electrons, possibly from O-H bond formation, stabilize the VO{sub 2}(R) to low temperatures. By controlling the amount of dopants to obtain mixed insulating and metallic phases, VO{sub 2} resistivity can be continuously tuned until a critical condition is achieved that suppresses Fabry-Perot resonances. Our results demonstrate that hydrogen spillover is an effective technique to tune the electrical and optical properties of VO{sub 2} thin films.
- OSTI ID:
- 22299882
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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