Continuous tuning of W-doped VO{sub 2} optical properties for terahertz analog applications

Journal Article · Mon Nov 17 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902056· OSTI ID:22391996

Karaoglan-Bebek, G. ^[1]; Hoque, M. N. F.; Fan, Z.; Holtz, M. ^[2]

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1. Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409 (United States)
2. Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)

Vanadium dioxide (VO{sub 2}), with its characteristic metal-insulator phase transition, is a prospective active candidate to realize tunable optical devices operating at terahertz (THz) frequencies. However, the abrupt phase transition restricts its practical use in analog-like continuous applications. Incorporation of tungsten is a feasible approach to alter the phase transition properties of thin VO{sub 2} films. We show that amplitude THz modulation depth of ∼65%, characteristic phase transition temperature of ∼40 °C, and tuning range larger than 35 °C can be achieved with W-doped VO{sub 2} films grown on sapphire substrates. W-doped VO{sub 2} films can also be used to suppress Fabry-Perot resonances at THz frequencies but at temperatures much lower than that observed for undoped VO{sub 2} films. The gradual phase transition temperature window allows for precise control of the W-doped VO{sub 2} optical properties for future analog based THz devices.

• OSTI ID: 22391996
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
MODULATION
OPTICAL PROPERTIES
PHASE TRANSFORMATIONS
SAPPHIRE
THZ RANGE
TRANSITION TEMPERATURE
TUNGSTEN
TUNING
VANADIUM OXIDES