Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates
- IBM Research-Almaden, San Jose, California 95120 (United States)
Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750 °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.
- OSTI ID:
- 22293047
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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