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Title: Epitaxial growth of VO{sub 2} by periodic annealing

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4864404· OSTI ID:22283179
; ;  [1];  [1]; ;  [2];  [3];  [4];  [5];  [6];  [4]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States)
  2. Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  3. Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  4. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
  5. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  6. Peter Grünberg Institute, PGI 9-IT, JARA-FIT, Research Centre Jülich, D-52425 Jülich (Germany)

We report the growth of ultrathin VO{sub 2} films on rutile TiO{sub 2} (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO{sub 2} via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

OSTI ID:
22283179
Journal Information:
Applied Physics Letters, Vol. 104, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English